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參數(shù)資料
| 型號(hào)： | MJD44H11 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor(General Purpose Power Switching Application)(NPN硅外延晶體管（通用功率開(kāi)關(guān)作用）) |
| 中文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | MJD44H11 |
2000 Fairchild Semiconductor International
Rev. A, February 2000
M
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector-Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
P
C
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
80
5
8
16
20
1.75
150
- 65 ~ 150
Units
V
V
A
A
W
W
°
C
°
C
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 80V, I
B
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10A, I
C
= 0.5A
V
CB
=10V, f = 1MHz
I
C
= 5A
I
B
1 = I
B
2 = 0.5A
Min.
80
Typ.
Max.
Units
V
μ
A
μ
A
10
50
60
40
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn ON Time
Storage Time
Fall Time
1
1.5
V
V
50
130
300
500
140
MHz
pF
ns
ns
ns
MJD44H11
General Purpose Power Switching Such as
Output or Driver Stages in Applications
D-PACK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I.PACK, “- I” Suffix)
Electrically Similar to Popular KSE44H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors |
| MJD44H11_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11-001 | 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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