參數(shù)資料
型號(hào)： MJD44H11
廠商： 意法半導(dǎo)體
英文描述： Complementary Silicon PNP Transistors(互補(bǔ)硅PNP晶體管)
中文描述： 互補(bǔ)硅PNP晶體管（互補(bǔ)硅晶體管進(jìn)步黨）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 63K
代理商： MJD44H11
MJD44H11
MJD45H11
COMPLEMENTARY SILICON PNP TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
LOW COLLECTOR-EMITTERSATURATION
VOLTAGE
I
FAST SWITCHING SPEED
APPLICATIONS
I
GENERALPURPOSE SWITCHING
I
GENERALPURPOSE AMPLIFIER
DESCRIPTION
The MJD44H11 is a silicon multiepitaxial planar
NPN
transistors
mounted
package.
It is inteded for various switching and general
purpose applications.
The complementaryPNP type is MJD45H11.
in
DPAK
plastic
INTERNAL SCHEMATIC DIAGRAM
July 1997
1
3
DPAK
(TO-252)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
MJD44H11
MJD45H11
80
5
8
16
20
-55 to 150
150
Unit
NPN
PNP
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types the values are intented negative.
V
V
A
A
W
o
C
o
C
1/5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD44H11_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors
MJD44H11_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11-001 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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