參數(shù)資料
型號: MJD44H11
廠商: 意法半導(dǎo)體
英文描述: Complementary Silicon PNP Transistors(互補(bǔ)硅PNP晶體管)
中文描述: 互補(bǔ)硅PNP晶體管(互補(bǔ)硅晶體管進(jìn)步黨)
文件頁數(shù): 3/5頁
文件大?。?/td> 63K
代理商: MJD44H11
DCCurrent Gain (NPN type)
Collector-Emitter SaturationVoltage(NPN type)
DC Current Gain (PNP type)
Collector-EmitterSaturation Voltage (PNP type)
MJD44H11 / MJD45H11
3/5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD44H11_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors
MJD44H11_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD44H11-001 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2