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參數(shù)資料
| 型號(hào)： | MJE13009 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Silicon NPN Switching Transistor(硅NPN開關(guān)晶體管) |
| 中文描述： | 硅NPN開關(guān)晶體管（硅npn型開關(guān)晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 77K |
| 代理商： | MJE13009 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.25
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current
V
CEV
= rated value
V
BE(off)
= 1.5 V
V
CEV
= rated value
V
EB(off)
= 1.5 V
T
case
= 100
C
V
EB
= 9 V
1
5
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
I
E
= 0
400
V
I
C
= 5 A
I
C
= 8 A
I
C
= 12 A
I
C
= 8 A
T
case
= 100
o
C
I
C
= 5 A
I
C
= 8 A
I
C
= 8 A
T
case
= 100
o
C
I
C
= 5 A
I
C
= 8 A
I
C
= 500 mA
V
CB
= 10 A
f = 0.1 MHz
RESISTIVE LOAD
V
CC
= 125 V
I
B1
= -I
B2
= 1.6 A
Duty Cycle
≤
1%
I
B
= 1 A
I
B
= 1.6 A
I
B
= 3 A
I
B
= 1.6 A
1
1.5
3
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
B
= 1 A
I
B
= 1.6 A
I
B
= 1.6 A
1.2
1.6
1.5
V
V
V
h
FE
DC Current Gain
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 10 V
I
E
= 0
8
6
40
30
f
T
Transistor Frequency
4
MHz
C
OB
Output Capacitance
180
pF
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 8A
t
p
= 25
μ
s
1.1
3
0.7
μ
s
μ
s
μ
s
Pulsed:Pulseduration = 300
μ
s, dutycycle
≤
2 %
Safe OperatingAreas
Derating Curve
MJE13009
2/6
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|---|---|
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| MJE13009_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
| MJE13009D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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