參數資料
型號： MJE350
廠商： 意法半導體
英文描述： Complemetary Silicon Power Transistors(互補硅功率晶體管)
中文描述： Complemetary硅功率晶體管（互補硅功率晶體管）
文件頁數： 1/5頁
文件大?。?/td> 65K
代理商： MJE350
MJE340
MJE350
COMPLEMETARY SILICON POWER TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARYPNP - NPN DEVICES
APPLICATIONS
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The MJE340 is a silicon epitaxial planar NPN
transistor intended for use in medium power
linear and switching applications.It is mounted in
SOT-32.
The complementaryPNP type is MJE350.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJE340
Unit
PNP
MJE350
300
Unit
V
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (IC = 0)
3
V
Collector Current
Total Power Dissipation at T
case
≤
25
o
C
Storage Temperature
0.5
A
20.8
W
o
C
o
C
-65 to 150
Max Operating Junction Temperature
For PNP typesvoltage and current values are negative.
150
SOT-32
3
21
1/5
相關PDF資料
PDF描述
MJE700 Monolithic Construction With Built-in Base- Emitter Resistors
MJE700 NPN (HIGH DC CURRENT GAIN)
MJE701 NPN (HIGH DC CURRENT GAIN)
MJE700 DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE700T DARLINGTON POWER TRANSISTORS COMPLEMENTARY
相關代理商/技術參數
參數描述
MJE350 制造商:ON Semiconductor 功能描述:BIP-300V 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP, -300V
MJE350 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-126 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-126
MJE350G 功能描述:兩極晶體管 - BJT 0.5A 300V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE350STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE370 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON COMPLEMENTARY POWER TRANSISTORS
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