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參數(shù)資料
| 型號： | MJE701 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Monolithic Construction With Built-in Base- Emitter Resistors |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MJE701 |
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
M
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Sym-
bol
V
CBO
Collector- Base Voltage : MJE700/701
: MJE702/703
V
CEO
Collector-Emitter Voltage : MJE700/701
: MJE702/703
V
EBO
Emitter- Base Voltage
I
C
Collector Current
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CEO
Parameter
Value
Unit
s
V
V
V
V
V
A
A
W
°
C
°
C
- 60
- 80
- 60
- 80
- 5
- 4
- 0.1
40
150
- 55 ~ 150
Test Condition
Min.
Max.
Units
Collector-Emitter Breakdown Voltage
: MJE700/701
: MJE702/703
I
C
= - 10mA, I
B
= 0
-60
-80
V
V
I
CEO
I
CBO
Collector Cut-off Current
: MJE700/701
: MJE702/703
V
CE
= - 60V, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100
°
C
V
BE
= - 5V, I
C
= 0
-100
-100
-100
-500
μ
A
μ
A
μ
A
μ
A
Collector Cut-off Current
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
-2
mA
: MJE700/702
: MJE701/703
: ALL DEVICES
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
C
= - 1.5A, I
B
= - 30mA
I
C
= - 2A, I
B
= - 40mA
I
C
= - 4A, I
B
= - 40mA
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
750
750
100
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
-2.5
-2.8
-3
V
V
V
V
BE
(on)
Base-Emitter On Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
-1.2
-2.5
-3
V
V
V
MJE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= -1.5 and -2.0A DC
Complement to MJE800/801/802/803
R1
R2
10k
0.6k
Equivalent Circuit
B
E
C
R1
R2
1
1. Emitter 2.Collector 3.Base
TO-126
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE701STU | 功能描述:達(dá)林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE701T | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor |
| MJE702 | 功能描述:達(dá)林頓晶體管 4A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE702G | 功能描述:達(dá)林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE702STU | 功能描述:達(dá)林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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