Table 18. Flash command timing characteristics (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trdrsrc
Read Resource execution time
—
35
μs
tpgm4
Program Longword execution time
—
50
TBD
μs
tersblk
Erase Flash Block execution time
—
160
800
ms
tersscr
Erase Flash Sector execution time
—
20
100
ms
tpgmsec2k
Program Section execution time (2 KB flash sec‐
tor)
—
TBD
ms
trd1all
Read 1s All Blocks execution time
—
2.8
ms
trdonce
Read Once execution time
—
35
μs
tpgmonce
Program Once execution time
—
50
TBD
μs
tersall
Erase All Blocks execution time
—
320
1600
ms
tvfykey
Verify Backdoor Access Key execution time
—
35
μs
tpgmpart
Program Partition for EEPROM execution time
—
175
TBD
ms
tsetram32k Set FlexRAM Function execution time for 32 KB
of EEPROM backup
—
TBD
ms
tsetram256k Set FlexRAM Function execution time for 256
KB of EEPROM backup
—
TBD
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
—
100
TBD
μs
teewr8b32k Byte-write to FlexRAM execution time (32 KB
EEPROM backup)
—
TBD
ms
teewr8b64k Byte-write to FlexRAM execution time (64 KB
EEPROM backup)
—
TBD
1.5
ms
teewr8b128k Byte-write to FlexRAM execution time (128 KB
EEPROM backup)
—
TBD
ms
teewr8b256k Byte-write to FlexRAM execution time (256 KB
EEPROM backup)
—
TBD
2.5
ms
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location execu‐
tion time
—
100
TBD
μs
teewr16b32k Word-write to FlexRAM execution time (32 KB
EEPROM backup)
—
TBD
ms
teewr16b64k Word-write to FlexRAM execution time (64 KB
EEPROM backup)
—
TBD
1.5
ms
teewr16b128k Word-write to FlexRAM execution time (128 KB
EEPROM backup)
—
TBD
ms
teewr16b256k Word-write to FlexRAM execution time (256 KB
EEPROM backup)
—
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
Table continues on the next page...
Peripheral operating requirements and behaviors
K40 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
30
Preliminary
Freescale Semiconductor, Inc.
Preliminary