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參數(shù)資料
| 型號(hào)： | MMAD1107 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 0.4 A, 16 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | SO-14 |
| 文件頁(yè)數(shù)： | 12/34頁(yè) |
| 文件大?。?/td> | 324K |
| 代理商： | MMAD1107 |
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MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109
5–94
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Device
Description
Diagram
MMAD130
Dual 10 Diode Array
1
MMAD1103
16 Diode Array
2
MMAD1105
8 Diode Array Common Cathode
3
MMAD1107
Dual 8 Diode Array
4
MMAD1109
7 Diode Array
5
ELECTRICAL CHARACTERISTICS (@ 25
°C Free–Air Temperature)
Limit
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage(1)
(IR = 10 Adc)
V(BR)
50
—
Vdc
Static Reverse Current
(VR = 40 Vdc)
IR
—
0.1
Adc
Static Forward Voltage
(IF = 100 mAdc)
(IF = 500 mAdc)(2)
VF
—
1.2
1.6
Vdc
Peak Forward Voltage(3)
(IF = 500 mAdc)
VFM
—
5.0
Vdc
SWITCHING CHARACTERISTICS (@ 25
°C Free–Air Temperature)
Characteristic
Symbol
Typical Value
Unit
Forward Recovery Time
(IF = 500 mAdc)
tfr
20
ns
Reverse Recovery Time
(IF = 200 mA, IRM = 200 mA, RL = 100 W, irr = 20 mA)
trr
8.0
ns
NOTES:
1. This parameter must be measured using pulse techniques. PW = 100
s, duty cycle ≤ 20%.
2. This parameter is measured using pulse techniques. PW = 300
s, duty cycle ≤ 2.0%. Read time is 90 s from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle
≤ 2.0%, pulse rise time ≤ 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
Figure 1. Typical Characteristics Static
Forward Voltage
1000
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TA = +25°C
I
,FOR
W
ARD
CURRENT
(mA)
F
VF, FORWARD VOLTAGE (VOLTS)
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| MMAD1107/TR13 | 制造商:Microsemi Corporation 功能描述:DIODE ARRAY, SOIC14, SD - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ARRAY - Tape and Reel |
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