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參數(shù)資料
| 型號： | MMBF0201NLT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 353K |
| 代理商： | MMBF0201NLT3 |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine
Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C(1)
PD
225
mW
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
R
θJA
556
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF0201NLT1
7
″
12 mm embossed tape
3000
MMBF0201NLT3
13
″
12 mm embossed tape
10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 318–08, Style 21
SOT–23 (TO–236AB)
MMBF0201NLT1
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
Motorola Preferred Device
1
2
3
3 DRAIN
1
GATE
2 SOURCE
REV 1
相關(guān)PDF資料 |
PDF描述 |
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| MMBF2201NT3 | 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMBF2202PT3 | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF0202PLT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts |
| MMBF102 | 功能描述:射頻JFET晶體管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBF102LT1 | 制造商:Motorola Inc 功能描述: |
| MMBF1374T1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMBF170 | 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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