參數(shù)資料
型號(hào): MMBF0202PLT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 12/34頁
文件大?。?/td> 356K
代理商: MMBF0202PLT3
MMBF0202PLT1
3–57
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
±100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
rDS(on)
0.9
2.0
1.4
3.5
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
600
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
50
pF
Output Capacitance
(VDS = 5.0 V)
Coss
45
Transfer Capacitance
(VDG = 5.0 V)
Crss
20
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
2.5
ns
Rise Time
(VDD = –15 Vdc,
RL =75 ID = 200 mAdc
tr
1.0
Turn–Off Delay Time
RL = 75 , ID = 200 mAdc,
VGEN = –10 V, RG = 6.0 )
td(off)
16
Fall Time
GEN
G
tf
8.0
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
QT
2700
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
0.3
A
Pulsed Current
ISM
0.75
Forward Voltage(2)
VSD
1.5
V
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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