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參數(shù)資料
| 型號(hào)： | MMDF2C02E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual Power MOSFET 2.5 Amps, 25 Volts(2.5A，25V，雙功率MOS場效應(yīng)管（N溝道+P溝道）) |
| 中文描述： | 雙功率MOSFET2.5安培，25伏（包2.5a，25V的，雙功率馬鞍山場效應(yīng)管（不適用溝道P溝道）） |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MMDF2C02E |
MMDF2C02E
http://onsemi.com
12
PACKAGE DIMENSIONS
STYLE 14:
PIN 1.
NSOURCE
NGATE
PSOURCE
PGATE
PDRAIN
PDRAIN
NDRAIN
NDRAIN
2.
3.
4.
5.
6.
7.
8.
SEATING
PLANE
1
4
5
8
N
J
X 45
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
B
C
D
G
H
J
K
M
N
S
MIN
4.80
3.80
1.35
0.33
MAX
5.00
4.00
1.75
0.51
MIN
0.189
0.150
0.053
0.013
MAX
0.197
0.157
0.069
0.020
INCHES
MILLIMETERS
1.27 BSC
0.10
0.19
0.40
0
0.25
5.80
0.050 BSC
0.004
0.007
0.016
0
0.010
0.228
0.25
0.25
1.27
8
0.50
6.20
0.010
0.010
0.050
8
0.020
0.244
–X–
–Y–
G
M
Y
M
0.25 (0.010)
–Z–
Y
M
0.25 (0.010)
Z
S
X
S
M
XXXXXX
ALYW
SO–8
CASE 751–07
ISSUE V
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| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
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| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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