- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385628 > MMDF2C02E (ON SEMICONDUCTOR) Dual Power MOSFET 2.5 Amps, 25 Volts(2.5A，25V，雙功率MOS場效應(yīng)管（N溝道+P溝道）) PDF資料下載
參數(shù)資料
| 型號： | MMDF2C02E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual Power MOSFET 2.5 Amps, 25 Volts(2.5A，25V，雙功率MOS場效應(yīng)管（N溝道+P溝道）) |
| 中文描述： | 雙功率MOSFET2.5安培，25伏（包2.5a，25V的，雙功率馬鞍山場效應(yīng)管（不適用溝道P溝道）） |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MMDF2C02E |
MMDF2C02E
http://onsemi.com
7
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
I
t, TIME
di/dt = 300 A/
μ
s
Standard Cell Density
trr
High Cell Density
trr
tb
ta
Figure 7. Reverse Recovery Time (trr)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF2C03HD | Power MOSFET 2 Amps, 30 Volts Complementary SO8, Dual(2A,30V,SO-8,N/P溝道功率雙MOSFET) |
| MMDF2N02E | Power MOSFET 2 Amps, 25 Volts N Channel SO8, Dual(2A,25V,SO-8,N溝道功率雙MOSFET) |
| MMDF3N04HDR2 | Power MOSFET 3 Amps, 40 Volts |
| MMDF3N04HD | Power MOSFET 3 Amps, 40 Volts N Channel SO8, Dual(3A,40V,SO-8,N溝道功率雙MOSFET) |
| MMDL914T1 | High Speed Switching Diode(高速開關(guān)二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。