參數(shù)資料
型號(hào): MPC2106CDG66
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
中文描述: 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
文件頁數(shù): 7/20頁
文件大小: 245K
代理商: MPC2106CDG66
MPC2105A
MPC2106A
MPC2105B
MPC2106B
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
5%, VDD = 3.3 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VDD
4.75
3.00
5.25
3.60
V
Input High Voltage
VIH
VIL
2.2
VDD + 0.3**
0.8
V
Input Low Voltage
– 0.5*
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Data RAM
Tag
Ilkg(I)
±
1.0
±
5.0
μ
A
Output Leakage Current (CG = VIH, Vout = 0 to VDD)
Data RAM
Tag
Ilkg(O)
±
1.0
±
5.0
μ
A
TTL Output Low Voltage (IOL = + 8.0 mA)
TTL Output High Voltage (IOH = – 4.0 mA)
VOL
VOH
0.4
V
2.4
V
POWER SUPPLY CURRENTS
Parameter
Symbol
Max
Unit
AC Supply Current (CG = VIH, E = VIL, Iout = 0 mA, All Inputs = VIL and VIH,
VIL = 0.0 V and VIH
3.0 V, Cycle Time
20 ns)
MPC2105A/B
MPC2106A/B
IDDA
900
1800
mA
MPC2105A/B
MPC2106A/B
ICCA
320
640
mA
AC Standby Current (E = VIH, Iout = 0 mA, All Inputs = VIL or VIH
VIL = 0.0 V and VIH
3.0 V, Cycle Time
20 ns)
MPC2105A/B
MPC2106A/B
ISB1 VDD)
440
880
mA
MPC2105A/B
MPC2106A/B
ISB1 VCC)
320
640
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
(A13 – A28)
(Data RAM Control Pins)
(CLK0 – CLK4)
(Tag Control Pins)
Cin
16
8
15
20
10
5
pF
Tag Output Capacitance
(MATCH, DIRTYOUT)
Cout
CI/O
CI/O
7
pF
Data RAM Input/Output Capacitance
(DH0 – DH31, DL0 – DL31)
6
8
pF
Tag Input/Output Capacitance
(A0 – A11)
7
pF
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