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| 型號： | MPC8265AVVPJDC |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 49/50頁 |
| 文件大小： | 0K |
| 描述： | IC MPU POWERQUICC II 480-TBGA |
| 標準包裝： | 21 |
| 系列： | MPC82xx |
| 處理器類型： | 32-位 MPC82xx PowerQUICC II |
| 速度： | 300MHz |
| 電壓： | 2V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 480-LBGA |
| 供應(yīng)商設(shè)備封裝： | 408-TBGA（37.5x37.5） |
| 包裝： | 托盤 |
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MPC8260A PowerQUICC II Integrated Communications Processor Hardware Specifications, Rev. 2.0
8
Freescale Semiconductor
Electrical and Thermal Characteristics
Table 2 lists recommended operational voltage conditions.
NOTE: Core, PLL, and I/O Supply Voltages
VDDH, VCCSYN, and VDD must track each other and both must vary in
the same direction—in the positive direction (+5% and +0.1 Vdc) or in the
negative direction (–5% and –0.1 Vdc).
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (either GND or VCC).
Figure 2 shows the undershoot and overshoot voltage of the 60x and local bus memory interface of the
MPC8280. Note that in PCI mode the I/O interface is different.
Figure 2. Overshoot/Undershoot Voltage
Table 2. Recommended Operating Conditions1
1 Caution: These are the recommended and tested operating conditions. Proper device operating outside of these
conditions is not guaranteed.
Rating
Symbol
Value
Unit
Core supply voltage
VDD
1.7 – 1.92
2 CPU frequency less than or equal to 200 MHz.
1.7–2.13
3 CPU frequency greater than 200 MHz but less than 233 MHz.
1.9 –2.24
4 CPU frequency greater than or equal to 233 MHz.
V
PLL supply voltage
VCCSYN
1.7 – 1.92
1.7–2.13
1.9–2.24
V
I/O supply voltage
VDDH
3.135 – 3.465
V
Input voltage
VIN
GND (–0.3) – 3.465
V
Junction temperature (maximum)
Tj
1055
5 Note that for extended temperature parts the range is (-40)
TA
– 105Tj.
°C
Ambient temperature
TA
0–705
°C
GND
GND – 0.3 V
GND – 1.0 V
Not to exceed 10%
GVDD
of tSDRAM_CLK
GVDD + 5%
4 V
VIH
VIL
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