參數(shù)資料
型號(hào): MPC852TVR50
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Hardware Specifications
中文描述: 硬件規(guī)格
文件頁數(shù): 7/80頁
文件大?。?/td> 3080K
代理商: MPC852TVR50
MPC852T Hardware Specifications, Rev. 3.1
Freescale Semiconductor
7
DC Characteristics
6
DC Characteristics
Table 5
provides the DC electrical characteristics for the MPC852T.
2
Maximum power dissipation at V
DDL
and V
DDSYN
is at 1.9 V. and V
DDH
is at 3.465 V.
NOTE
Values in
Table 4
represent V
DDL
-based power
dissipation, and do not include I/O power dissipation
over V
DDH
. I/O power dissipation varies widely by
application that buffer current can cause, depending
on external circuitry.
The V
DDSYN
power dissipation is negligible.
Table 5. DC Electrical Specifications
Characteristic
Symbol
Min
Max
Unit
Operating voltage
V
DDH
3.135
3.465
V
V
DDL
1.7
1.9
V
V
DDSYN
1.7
1.9
V
Difference between V
DDL
to
V
DDSYN
100
mV
Input high voltage (all inputs except
PA[0:3], PA[8:11], PB15, PB[24:25];
PB[28:31], PC[4:7], PC[12:13], PC15,
PD[3:15], TDI, TDO, TCK, TRST, TMS,
MII_TXEN, MII_MDIO)
1
V
IH
2.0
3.465
V
Input low voltage
V
IL
GND
0.8
V
EXTAL, EXTCLK input high voltage
V
IHC
0.7
×
V
DDH
V
DDH
V
Input leakage current, Vin = 5.5 V
(Except TMS, TRST, DSCK and DSDI
pins) for 5-V tolerant pins
1
I
in
100
μA
Input leakage current, Vin = V
DDH
(Except TMS, TRST, DSCK, and DSDI)
I
In
10
μA
Input leakage current, Vin = 0 V (Except
TMS, TRST, DSCK and DSDI pins)
I
In
10
μA
Input capacitance
2
C
in
20
pF
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