參數(shù)資料
型號： MR80C52EXXX-25:RD
廠商： ATMEL CORP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, MROM, 25 MHz, MICROCONTROLLER, CQCC44
封裝： LCC-44
文件頁數(shù)： 10/176頁
文件大?。?/td> 2962K
107
2535J–AVR–08/10
ATtiny13
.
17.6.2
Serial Programming Instruction set
The instruction set is described in Table 17-9.
Table 17-8.
Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
Minimum Wait Delay
tWD_FLASH
4.5 ms
tWD_EEPROM
4.0 ms
tWD_ERASE
9.0 ms
tWD_FUSE
4.5 ms
Table 17-9.
Serial Programming Instruction Set
Instruction
Instruction Format
Operation
Byte 1
Byte 2
Byte 3
Byte4
Programming Enable
1010 1100
0101 0011
xxxx xxxx
Enable Serial Programming after
RESET goes low.
Chip Erase
1010 1100
100x xxxx
xxxx xxxx
Chip Erase EEPROM and Flash.
Read Program Memory
0010 H000
0000 000a
bbbb bbbb
oooo oooo
Read H (high or low) data o from
Program memory at word address a:b.
Load Program Memory Page
0100 H000
000x xxxx
xxxx bbbb
iiii iiii
Write H (high or low) data i to Program
memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page
0100 1100
0000 000a
bbbb xxxx
xxxx xxxx
Write Program memory Page at
address a:b.
Read EEPROM Memory
1010 0000
000x xxxx
xxbb bbbb
oooo oooo
Read data o from EEPROM memory at
address b.
Write EEPROM Memory
1100 0000
000x xxxx
xxbb bbbb
iiii iiii
Write data i to EEPROM memory at
address b.
Load EEPROM Memory
Page (page access)
1100 0001
0000 0000
0000 00bb
iiii iiii
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM Memory
Page (page access)
1100 0010
00xx xxxx
xxbb
bb00
xxxx xxxx
Write EEPROM page at address b.
Read Lock Bits
0101 1000
0000 0000
xxxx xxxx
xxoo oooo
Read lock bits. “0” = programmed, “1”
= unprogrammed. See Table 17-1 on
page 102 for details.
Write Lock Bits
1010 1100
111x xxxx
xxxx xxxx
11ii iiii
Write lock bits. Set bits = “0” to
program lock bits. See Table 17-1 on
page 102 for details.
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