參數(shù)資料
型號： MR80C52EXXX-25:RD
廠商： ATMEL CORP
元件分類： 微控制器/微處理器
英文描述： 8-BIT, MROM, 25 MHz, MICROCONTROLLER, CQCC44
封裝： LCC-44
文件頁數(shù)： 16/176頁
文件大?。?/td> 2962K
112
2535J–AVR–08/10
ATtiny13
Note:
a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low bits,
x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 fuse, 4 = CKSEL1 fuse, 5 = SUT0 fuse, 6 = SUT1 fuse, 7 = CKDIV8,
fuse, 8 = WDTON fuse, 9 = EESAVE fuse, A = SPIEN fuse, B = RSTDISBL fuse, C = BODLEVEL0 fuse, D= BODLEVEL1 fuse,
E = MONEN fuse, F = SELFPRGEN fuse
Note:
The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM. Page-
wise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase of
EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.
17.8 Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
EESAVE fuse is programmed) and Flash after a Chip Erase.
Address High byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
17.8.1
Chip Erase
The Chip Erase will erase the Flash and EEPROM(1) memories plus lock bits. The lock bits are
not reset until the Program memory has been completely erased. The fuse bits are not changed.
A Chip Erase must be performed before the Flash and/or EEPROM are re-programmed.
1. Load command “Chip Erase” (see Table 17-13 on page 110).
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
Note:
1. The EEPROM memory is preserved during Chip Erase if the EESAVE fuse is programmed.
Read Signature
Bytes
SDI
SII
SDO
0_0000_1000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_00bb_00
0_0000_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
q_qqqq_qqqx_xx
Repeats Instr 2 4 for each
signature byte address.
Read
Calibration Byte
SDI
SII
SDO
0_0000_1000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_000b_00
0_0000_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1100_00
p_pppp_pppx_xx
Load “No
Operation”
Command
SDI
SII
SDO
0_0000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
Table 17-13. High-Voltage Serial Programming Instruction Set for ATtiny13 (Continued)
Instruction
Instruction Format
Operation Remarks
Instr.1/5
Instr.2/6
Instr.3
Instr.4
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