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參數(shù)資料
| 型號(hào)： | MRF1047T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Low Noise Transistors(低噪聲晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 271K |
| 代理商： | MRF1047T1 |
Device
Package
SEMICONDUCTOR
TECHNICAL DATA
RF NPN
SILICON TRANSISTOR
f
τ
= 12 GHz
NFmin = 1.0 dB
ICMAX = 45 mA
VCEO = 5.0 V
ORDERING INFORMATION
MRF1047T1
SC–70
Tape & Reel*
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
3
1
Order this document by MRF1047T1/D
Pin 1. Base
2. Emitter
3. Collector
Marking
WB
*3,000 Units per 8 mm, 7 inch reel.
2
1
The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz f
τ
discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high f
τ,
low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
High Current Gain–Bandwidth Product, f
τ
= 12 GHz, 3.0 V @ 15 mA
Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V
and 15 mA
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD(max)
5.0
Vdc
Collector–Base Voltage
12
Vdc
Emitter–Base Voltage
2.5
Vdc
Collector Current – Continuous [Note 3]
45
mAdc
Power Dissipation @ TC = 75
°
C
Derate Linearly above TC = 75
°
C at
Storage Temperature Range
0.172
2.3
W
mW/
°
C
°
C
Tstg
–55 to 150
Maximum Junction Temperature
TJ(max)
150
°
C
NOTES:
1.Meets Human Body Model (HBM)
≤
300 V and Machine Model (MM)
≤
75 V.
2.ESD data available upon request.
3.For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction–to–Case
R
θ
JC
435
°
C/W
NOTE:
To calculate the junction temperature use TJ = (PD x R
JC) + TC. The case
temperature measured on collector lead adjacent to the package body.
This document contains information on a new product. Specifications and information herein
are subject to change without notice.
Motorola, Inc. 1998
Rev 2
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