- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371143 > MRF1047T1 (MOTOROLA INC) Low Noise Transistors(低噪聲晶體管) PDF資料下載
參數(shù)資料
| 型號： | MRF1047T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low Noise Transistors(低噪聲晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 271K |
| 代理商： | MRF1047T1 |
MRF1047T1
2
MOTOROLA RF/IF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
[Note 1]
Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
Emitter Cutoff Current (VEB = 1.0 V, IC = 0)
V(BR)CEO
V(BR)CBO
IEBO
5.0
–
–
Vdc
12
–
–
Vdc
áááááááááááááááááááááááááááááááá
áááááááááááááááááááááááááááááááá
–
–
0.1
μ
A
ON CHARACTERISTICS
[Note 1]
DC Current Gain (VCE = 3.0 V, IC = 3.0 mA)
hFE
100
–
200
–
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance (VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Current–Gain Bandwidth Product (VCE = 3.0 Vdc, IC = 15 mA, f = 1.0 GHz)
Ccb
f
τ
–
0.4
–
pF
–
12
–
GHz
PERFORMANCE CHARACTERISTICS
Insertion Gain
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
Maximum Stable Gain and/or Maximum Available Gain [Note 2]
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
Minimum Noise Figure
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
Associated Gain at Minimum NF
VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz
Output Power at 1.0 dB Gain Compression [Note 3] (VCE = 3.0 V,
IC = 3.0 mA, f = 1.0 GHz)
|S21|2
dB
–
–
8.0
13
–
–
MSG, MAG
dB
–
–
11
16
–
–
NFmin
dB
–
–
1.2
1.0
–
–
GNF
dB
–
–
10
13
–
–
P1dB
–
0.5
–
dBm
Output Third Order Intercept [Note 3] (VCE = 3.0 V, IC = 3.0 mA,
f = 1.0 GHz)
OIP3
–
22
–
dBm
NOTES:
1.Pulse width
≤
300
μ
s, duty cycle
≤
2% pulsed.
2.Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
|
S12
3.Zin = 50
and Zout matched for optimum IP3.
MAG
S21
K
K2
1
|,
if K
1, MSG
|
S21
S12
|
, if K
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF148A | RF Power FETs(RF功率場效應(yīng)管) |
| MRF15090 | NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) |
| MRF1511T1 | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF1517T1 | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| MRF1535FNT1 | RF Power Field Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF10500 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF10501 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF10502 | 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF1090MA | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:MICROWAVE POWER TRANSISTOR NPN SILICON |
| MRF1090MB | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 70V 4PIN CASE 332A-03 - Bulk 制造商:M/A-Com Technology Solutions 功能描述:M/A-Com Technology Solutions MRF1090MB GP BJTs 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。