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參數(shù)資料
| 型號： | MRF1511NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 230K |
| 代理商： | MRF1511NT1 |
MRF1511NT1 MRF1511T1
5
RF Device Data
Freescale Semiconductor
Figure 10. 66
88 MHz Broadband Test Circuit
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
330 pF, 100 mil Chip Capacitor
43 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
24 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
10
μ
F, 50 V Electrolytic Capacitor
1,200 pF, 100 mil Chip Capacitor
0.1
μ
F, 100 mil Chip Capacitor
380 pF, 100 mil Chip Capacitor
75 pF, 100 mil Chip Capacitor
82 nH, Coilcraft
55.5 nH, 5 Turn, Coilcraft
39 nH, 6 Turn, Coilcraft
C1, C12
C2
C3, C10
C4
C5, C16
C6, C13
C7, C14
C8, C15
C9
C11
L1
L2
L3
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
Type N Flange Mount
15
, 0805 Chip Resistor
51
, 1/2 W Resistor
100
, 0805 Chip Resistor
33 k
, 1/8 W Resistor
0.136
″
x 0.080
″
Microstrip
0.242
″
x 0.080
″
Microstrip
1.032
″
x 0.080
″
Microstrip
0.145
″
x 0.080
″
Microstrip
0.260
″
x 0.223
″
Microstrip
0.134
″
x 0.080
″
Microstrip
0.490
″
x 0.080
″
Microstrip
0.872
″
x 0.080
″
Microstrip
0.206
″
x 0.080
″
Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 66
88 MHz
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#
+
+
+
Figure 11. Output Power versus Input Power
,-
#
$%
&$'(
Figure 12. Input Return Loss
versus Output Power
.
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.
.
.
.
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/ .
+
+
+
+
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+
/ .
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| MRF1550FNT1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1511NT1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1511T1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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