參數(shù)資料
型號: MRF1511T1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistor
中文描述: RF功率場效應(yīng)晶體管
文件頁數(shù): 7/12頁
文件大?。?/td> 477K
代理商: MRF1511T1
A
A
MRF1511T1
7
RF Device Data
Freescale Semiconductor
Note: Z
OL
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 19. Series Equivalent Input and Output Impedance
Z
o
= 10
Ω
Z
in
= Complex conjugate of source
impedance with parallel 15
Ω
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
f
MHz
Z
in
Ω
Z
OL
*
Ω
135
20.1 -j0.5
2.53 -j2.61
Z
in
= Complex conjugate of source
impedance with parallel 15
Ω
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
V
DD
= 7.5 V,I
DQ
= 150 mA, P
out
= 8 W
155
17.0 +j3.6
3.01 -j2.48
175
15.2 +j7.9
2.52 -j3.02
f
MHz
Z
in
Ω
Z
OL
*
Ω
66
25.3 -j0.31
3.62 -j0.751
V
DD
= 7.5 V,I
DQ
= 150 mA, P
out
= 8 W
77
25.6 +j3.62
3.59 -j0.129
88
26.7 +j6.79
3.37 -j0.173
Z
OL
*
Z
in
135
155
f=175MHz
135
155
f = 175 MHz
66
77
Z
in
f = 88 MHz
66
77
f = 88 MHz
Z
OL
*
Zin
ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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