- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371143 > MRF1517T1 (MOTOROLA INC) RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF1517T1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | POWER, PLASTIC, CASE 466-02, 4 PIN |
| 文件頁(yè)數(shù)： | 12/16頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | MRF1517T1 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
MRF1517T1
12
MOTOROLA RF DEVICE DATA
MOUNTING
The specified maximum thermal resistance of 2
°
C/W
assumes a majority of the 0.065
″
x 0.180
″
source contact on
the back side of the package is in good contact with an
appropriate heat sink. As with all RF power devices, the goal
of the thermal design should be to minimize the temperature
at the back side of the package. Refer to Motorola
Application Note AN4005/D, “Thermal Management and
Mounting Method for the PLD–1.5 RF Power Surface Mount
Package,” and Engineering Bulletin EB209/D, “Mounting
Method for RF Power Leadless Surface Mount Transistor” for
additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Motorola Application Note AN721, “Impedance Matching
Networks Applied to RF Power Transistors.” Large–signal
impedances are provided, and will yield a good first pass
approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test
fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher
efficiency, lower gain, and more stable operating region.
Two–port stability analysis with this device’s S–parameters
provides a useful tool for selection of loading or feedback
circuitry to assure stable operation. See Motorola Application
Note AN215A, “RF Small–Signal Design Using Two–Port
Parameters” for a discussion of two port network theory and
stability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF1535FNT1 | RF Power Field Effect Transistors |
| MRF1535T1 | RF Power Field Effect Transistor |
| MRF1535NT1 | RF Power Field Effect Transistors |
| MRF1535FT1 | RF Power Field Effect Transistors |
| MRF16006 | RF POWER TRANSISTOR NPN SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1518N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1518NT1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518T1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。