參數(shù)資料
型號: MRF1570FT1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應(yīng)晶體管
文件頁數(shù): 14/20頁
文件大?。?/td> 449K
代理商: MRF1570FT1
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RF Device Data
Freescale Semiconductor
MRF1570T1 MRF1570FT1
MOUNTING
The specified maximum thermal resistance of 0.75
°
C/W
assumes a majority of the 0.170
x 0.608
source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, “RF Small-Signal
Design Using Two-Port Parameters” for a discussion of two
port network theory and stability.
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