參數(shù)資料
型號: MRF1570FT1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應(yīng)晶體管
文件頁數(shù): 19/20頁
文件大?。?/td> 449K
代理商: MRF1570FT1
MRF1570T1 MRF1570FT1
19
RF Device Data
Freescale Semiconductor
CASE 1366A-02
ISSUE C
TO-272-8
PLASTIC
MRF1570FT1
NOTES:
1. CONTROLLING DIMENSION:INCH.
2. INTERPRETDIMENSIONSANDTOLERANCES
PERASMEY14.5M,1994.
3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLDPROTRUSION.ALLOWABLEPROTRUSION
IS0.006PERSIDE.DIMENSIONS"D"AND"E1"DO
INCLUDEMOLDMISMATCHANDARE
DETERMINEDATDATUMPLANEH.
4. DIMENSIONS "b" AND "b1" DO NOT INCLUDE
DAMBARPROTRUSION.ALLOWABLEDAMBAR
PROTRUSIONSHALLBE0.005TOTALINEXCESS
OFTHE"b1"AND"b2"DIMENSIONSATMAXIMUM
MATERIALCONDITION.
5. CROSSHATCHINGREPRESENTSTHEEXPOSED
AREAOFTHEHEATSLUG.
6. DIMENSIONA2APPLIESWITHINZONE"J"ONLY.
A
M
aaa
D
B
E1
P
e
4X
D
4X
b2
D1
B
M
aaa
D B
M
aaa
D A
E
DIM
A
A1
A2
MIN
0.098
0.038
0.040
MAX
0.106
0.044
0.042
MIN
2.49
0.96
1.02
MAX
2.69
1.12
1.07
MILLIMETERS
INCHES
D
D1
D2
0.926
0.810BSC
0.608BSC
0.934
23.52
20.57BSC
15.44BSC
23.72
E
E1
E2
F
0.492
0.246
0.170BSC
0.025BSC
0.500
0.254
12.50
6.25
12.70
6.45
b
b1
b2
b3
b4
0.105
0.088
0.066
0.067
0.077
0.111
0.094
0.072
0.073
0.083
2.67
2.24
1.68
1.70
1.96
2.82
2.39
1.83
1.85
2.11
c1
e
e1
e2
0.007
0.104BSC
0.210BSC
0.229BSC
0.011
0.178
0.279
aaa
bbb
1
2
3
5
6
7
0.004
0.008
2.64BSC
5.33BSC
5.82BSC
0.10
0.20
4X
b1
P
0.126
0.134
3.20
3.40
4.32BSC
0.64BSC
4
2
1
6
5
7
VIEW Y-Y
3
8
bbb C
E2
D2
A
DRAIN ID
B
4
8
B
2X
e1
2X
b3
STYLE1:
PIN1. SOURCE(COMMON)
2. DRAIN
3. DRAIN
4. SOURCE (COMMON)
5. SOURCE (COMMON)
6. GATE
7. GATE
8. SOURCE (COMMON)
NOTE 5
D
A
SEATING
PLANE
Y
Y
A1
c1
(b1)
3X
b
M
aaa
D B
e2
3X
4X
ZONE "J"
6
F
A2
b4
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