參數(shù)資料
型號(hào)： MRF19090S
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF MOSFET(射頻MOS場(chǎng)效應(yīng)管)
中文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-880S, CASE 465C-02, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 157K
代理商： MRF19090S
MRF19090 MRF19090S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100
μ
A)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
10
μ
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.2
—
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300
μ
Adc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
VGS(Q)
2.5
3.8
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.10
—
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
4.2
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Gps
10
11.5
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
35
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
–30
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
–12
—
dB
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz)
P1dB
—
90
—
W
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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