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參數(shù)資料
| 型號： | MRF20060S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER BROADBAND NPN BIPOLAR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 109K |
| 代理商： | MRF20060S |
1
MRF20060 MRF20060S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Sub–Micron Bipolar Line
The MRF20060 and MRF20060S are designed for broadband commercial
and industrial applications at frequencies from 1800 to 2000 MHz. The high
gain, excellent linearity and broadband performance of these devices make
them ideal for large–signal, common emitter class A and class AB amplifier
applications. These devices are suitable for frequency modulated, amplitude
modulated and multi–carrier base station RF power amplifiers.
Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
Designed for FM, TDMA, CDMA and Multi–Carrier Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage (IB = 0 mA)
Collector–Emitter Voltage
VCEO
VCES
VCBO
VCER
VEB
IC
PD
25
Vdc
60
Vdc
Collector–Base Voltage
60
Vdc
Collector–Emitter Voltage (RBE = 100 Ohm)
Base–Emitter Voltage
30
Vdc
– 3
Vdc
Collector Current – Continuous
8
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
250
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.7
Order this document
by MRF20060/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–04, STYLE 1
(MRF20060)
CASE 451A–01, STYLE 1
(MRF20060S)
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