參數(shù)資料
型號： MRF20060S
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF POWER BROADBAND NPN BIPOLAR
中文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù)： 4/10頁
文件大?。?/td> 109K
代理商： MRF20060S
MRF20060 MRF20060S
4
MOTOROLA RF DEVICE DATA
B1
C1, C2
C3, C8
C4, C12
C5, C11
C6
C7, C10
C9
C13
C14
L1
L2
L3
Short Bead, Fair Rite
0.6–4.5 pF, Trimmer, Gigatrim, Johanson
100
μ
F, 50 V Electrolytic, Mallory
12 pF, Chip Capacitor, ATC
91 pF, Chip Capacitor, ATC
0.01 F, Chip Capacitor, ATC
24 pF, Chip Capacitor, ATC
0.4–2.5 pF, Trimmer, Gigatrim, Johanson
0.1 F, Chip Capacitor, ATC
470 F, 63 V Electrolytic, Mallory
2 Turn, 27 AWG, 0.049
″
ID Coil
0.041
″
dia., 0.7
″
Length Wire
11 Turn, 20 AWG, 0.19
″
ID Coil
N1, N2
Type N Flange Mount RF 55–22,
Connector, Omni Spectra
Transistor, NPN, Motorola (BD135)
Transistor, PNP, Motorola (BD136)
270
Chip Resistor, 1/8 Watt, Rohm
10 K , 1/4 Watt, Potentiometer
4.7 K , Chip Resistor, 1/8 Watt, Rohm
2 x 4.7 K , Chip Resistor, 1/8 Watt, Rohm
1.0 , 25 Watt, 1% Resistor, DALE
38 , Axial Lead, 1 Watt Resistor
4.2 K , Chip Resistor, 1/8 Watt, Rohm
3 x 39 , Chip Resistors, 1/8 Watt, Rohm
2 x 10 , Chip Resistor, 1/8 Watt, Rohm
10
Axial Lead, 1 Watt Resistor
Glass Teflon
, Arlon GX–0300–55–22,
ε
r = 2.55
Q1
Q2
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
Board
RF
OUTPUT
RF
INPUT
L2
L1
C12
C5
C7
C6
R8
B1
R10
L3
C9
N2
C13
C14
VCC
DUT
C1
C2
N1
C4
R1
R5
C3
Vsupply
+
+
Figure 2. Class A, 1.93 – 2 GHz Test Fixture Electrical Schematic
C11
C10
C8
R9
VCC
Z1
Z2
Z3
Z4
Z5
Z6
Z7
+
R4
R7
R6
R3
R2
Q1
Q2
相關PDF資料
PDF描述
MRF21010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
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