參數(shù)資料
型號: MRF20060S
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF POWER BROADBAND NPN BIPOLAR
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 6/10頁
文件大?。?/td> 109K
代理商: MRF20060S
MRF20060 MRF20060S
6
MOTOROLA RF DEVICE DATA
I
Figure 9. Class A DC Safe Operating Area
VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 10. Performance in Broadband Circuit
f, FREQUENCY MHz)
6
5
3
1
0
28
24
20
16
12
8
4
0
TJ = 175
°
C
2000
1960
1940
1920
1900
10
9
8.5
8
38
34
32
28
C
I
Figure 11. Class A Third Order Intercept Point
Pin, INPUT POWER (dBm)
50
40
30
20
10
0
60
40
20
0
–20
–40
G
1.3:1
1.2:1
1.1:1
P
4
2
9.5
36
FUNDAMENTAL
VCC = 24 Vdc
ICQ = 3.5 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
3rd Order
Gpe
VSWR
η
Pout = 60 W (PEP)
VCC = 26 Vdc
ICQ = 200 mA
1980
Figure 12. MTBF Factor versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTBF in hours x ampere2
emitter curent. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTBF factor by IC2 for MTBF in a particular application.
250
200
150
100
50
0
1.E+11
1.E+10
1.E+08
1.E+07
1.E+06
1.E+05
M
1.E+09
2
Tflange = 75
°
C
Tflange = 100
°
C
B
MTBF LIMITED
8
7
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