參數(shù)資料
型號(hào): MRF21120R6
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistor
中文描述: RF功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 12/12頁(yè)
文件大?。?/td> 364K
代理商: MRF21120R6
12
RF Device Data
Freescale Semiconductor
MRF21120R6
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Document Number: MRF21120
Rev. 11, 5/2006
相關(guān)PDF資料
PDF描述
MRF377HR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF377 RF POWER FIELD EFFECT TRANSISTOR
MRF377R5 Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation
MRF377R3 Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation
MRF377HR5 N-Channel Enhancement-Mode Lateral MOSFETs
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