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參數(shù)資料
| 型號： | MRF21120R6 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應晶體管 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 364K |
| 代理商： | MRF21120R6 |
MRF21120R6
5
RF Device Data
Freescale Semiconductor
Figure 2. 2110 - 2200 MHz Broadband Test Circuit Component Layout
L1
R1
C19
B1
R3
R5
C1 C2
R2
L2
C3
C4
R6
R4
B2
C25
V
GG
C24
C23
C22
C21
C20
C17
C16
C15
C14
C13
C30
C29
C7
L3
L4
C8
C6
C37
C39
C38
C36
C40
C42
C44
V
DD
C41C43
C9
C10
C11
C12
C5
L5
C27
C32 C33
V
DD
V
GG
C31
C34
C35
226
35K
649
226
35K
649
2
3
6
2
3
6
2
3
6
6
5
1
2
3
6
C28
6
5
1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF377HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF377 | RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation |
| MRF377R3 | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation |
| MRF377HR5 | N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21125 | 制造商:Motorola Inc 功能描述: |
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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