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參數(shù)資料
| 型號： | MRF392 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 744A-01, 8 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 145K |
| 代理商： | MRF392 |
1
MRF392
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
Built–In Input Impedance Matching Networks for Broadband Operation
Push–Pull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
6
7
2
3
1, 4
5, 8
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
16
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
270
1.54
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.65
°
C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
Order this document
by MRF392/D
SEMICONDUCTOR TECHNICAL DATA
125 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A–01, STYLE 1
REV 8
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| MRF393 | 功能描述:射頻雙極電源晶體管 30-500MHz 100Watts 28Volt Gain 8.5dB RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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