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參數(shù)資料
| 型號： | MRF377 |
| 廠商： | Motorola, Inc. |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 780K |
| 代理商： | MRF377 |
MRF377HR3 MRF377HR5
5
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
2200 mA
100
16
19
10
G
ps
P
out
, OUTPUT POWER (WATTS) PEP
Figure 2. Two-Tone Power Gain versus
Output Power
Gp
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18.5
18
17.5
17
16.5
100
70
20
10
I
DQ
= 1400 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
I
I
V
DD
= 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
1600 mA
1800 mA
2000 mA
100
80
20
10
7th Order
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
I
I
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
30
40
50
60
70
5th Order
3rd Order
η
100
5
45
10
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Drain Efficiency versus
Output Power
,
η
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
40
35
30
25
20
15
10
η
100
12
19
10
80
60
G
ps
IMD
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
Gp
I
I
,
η
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
18
40
17
20
16
0
15
20
14
40
13
60
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF377R5 | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount with flange, 10 Vdc excitation |
| MRF377R3 | Pressure Transducer, Series 19 mm, Uncompensated, Pressure Range: 0 psi to 10 psi, Gage, flush mount, 10 Vdc excitation |
| MRF377HR5 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF421 | TRI GASKET FLG 24 BULK/100 |
| MRF421 | RF POWER TRANSISTORS NPN SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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