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參數(shù)資料
| 型號： | MRF5S21130HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| 中文描述： | 將使用的AB類的PCN-PCS/cellularradio和WLL應(yīng)用。 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 373K |
| 代理商： | MRF5S21130HR3 |
MRF5S21130HR3 MRF5S21130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2220
2060
IRL
G
ps
η
D
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
I
Gp
30
10
15
20
25
I
I
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 1200 mA
2Carrier WCDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
2200
2180
2160
2140
2120
2100
2080
6
14
13
12
11
10
9
8
7
44
35
30
25
20
28
32
36
40
1000
11
15
1
I
DQ
= 1600 mA
1400 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
Gp
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
TwoTone Measurement, 10 MHz Tone Spacing
800 mA
1200 mA
1000 mA
10
100
14.5
14
13.5
13
12.5
12
11.5
1000
65
25
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
I
I
100
10
30
35
40
45
50
55
60
1000 mA
800 mA
I
DQ
= 1600 mA
1200 mA
1400 mA
V
DD
= 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
TwoTone Measurement,
10 MHz Tone Spacing
100
60
25
0.1
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
I
I
1
10
30
35
40
45
50
55
47
57
33
Ideal
P1dB = 51.88 dBm (154.17 W)
Actual
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Po
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 5
μ
sec(on), 1 msec(off)
Center Frequency = 2140 MHz
P3dB = 52.58 dBm (181.1 W)
55
53
49
34
38
40
42
45
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
TwoTone Measurements, Center Frequency = 2140 MHz
3rd Order
5th Order
7th Order
η
D
,
E
51
35
36
37
39
41
43
44
46
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21130HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HS | 制造商:Motorola Inc 功能描述: |
| MRF5S21130HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
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