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參數(shù)資料
| 型號： | MRF5S21130HSR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
| 中文描述： | 將使用的AB類的PCN-PCS/cellularradio和WLL應(yīng)用。 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 373K |
| 代理商： | MRF5S21130HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
TYPICAL CHARACTERISTICS
0
35
5
55
20
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG. (WCDMA)
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
I
10
15
20
25
30
35
40
45
30
25
25
30
20
35
15
40
10
45
5
50
IM3
V
DD
= 28 Vdc, I
DQ
= 1200 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x WCDMA, 10 MHz @
3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
TYPICAL CHARACTERISTICS
W-CDMA TEST SIGNAL
η
D
η
D
,p
220
10
9
100
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
8
10
7
10
6
120
140
160
180
200
M
2
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
P
10
1
0.1
0.01
0.001
2
4
6
8
20
5
15
10
0
5
10
15
20
25
25
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(
90
100
40
30
3.84 MHz
Channel BW
IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
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| MRF5S21130HR3 | To be Used in class AB for PCN-PCS/cellularradio and WLL applications. |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S21130HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 LDMOS WCDMA NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S21130R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21130SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S21150 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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