- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6522-70R3 (飛思卡爾半導體(中國)有限公司) The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6522-70R3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 射頻MOSFET線的射頻功率場效應晶體管N溝道增強型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 510K |
| 代理商： | MRF6522-70R3 |
MRF6522-70R3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate-Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 400 mAdc)
V
GS(Q)
3
4
5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
—
0.15
0.6
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
2
3
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
—
130
—
pF
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
41
47
52
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
2.4
3
3.4
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Output Power (2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
P1dB
73
80
—
W
Common-Source Amplifier Power Gain @ P1dB (Min) (2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
G
ps
14
16
18
dB
Drain Efficiency @ P
out
= 50 W
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
η
1
47
51
—
%
Drain Efficiency @ P1dB (2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
η
2
—
58
—
%
Input Return Loss @ P
out
= 50 W
(V
DD
= 26 Vdc, I
DQ
= 400 mA,
f = 921 MHz and 960 MHz
f = 940 MHz)
IRL
—
—
—
—
- 10
- 15
dB
Output Mismatch Stress (2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz,
VSWR = 5:1, All Phase Angles)
Ψ
No Degradation In Output Power
Before and After Test
(1) Value excludes the input matching.
(2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch-to-batch
consistency.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6P18190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6 | RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P23190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P24190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6522--70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522-70R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF652-A | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF652S | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。