參數(shù)資料
型號： MRF658
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF POWER TRANSISTOR NPN SILICON
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù)： 2/6頁
文件大?。?/td> 93K
代理商： MRF658
MRF658
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE
40
85
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
170
220
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture. See Figure 1.)
Output Power
(VCC = 12.5 Vdc, Pin = 25 W, f = 470 & 512 MHz)
Pout
65
—
—
W
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 65 W, f = 470 & 512 MHz)
η
50
60
—
%
Output Mismatch Stress
(VCC = 15.5 Vdc, Pin = 32 W, f = 512 MHz, VSWR 20:1,
All Phase Angles)
ψ
No Degradation in Output Power
N1
N2
DELTA VRE PORT
(NORMALLY SHORTED)
12.5 Vdc
B3
B4
B1
B2
C13
10
μ
F
C14
0.18
μ
F
+
L1
C15
C16
C17
C18
C19
0.18
μ
F
C20
10
μ
F
+
SOCKET
D.U.T.
C5
RF INPUT
RF OUTPUT
LOAD % = 50 OHMS
C1
C2
C4
C3
L3
L2
C12
C11
C6
C7
C8
B1–B4 — Long Bead, Fair Rite (2743019446)
C1 — 56 pF, Chip Capacitor, Murata Erie
C2 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200
C3 — 39 pF, Chip Capacitor, Murata Erie
C4 — 1–20 pF Trimmer, Johanson–JMC 5501
C5 — 33 pF, Miniature Clamped Mica, SAHA
C6 — 33 pF, Miniature Clamped Mica, SAHA
C7 — 33 pF, Miniature Clamped Mica, SAHA
C8 — 27 pF, Miniature Clamped Mica, SAHA
C11 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200
C12 — 110 pF, Chip Capacitor, Murata Erie
C13 — 10
μ
F, 50 V Electrolytic, Panasonic–ECEV1HV100R
C14 — 0.18
μ
F Chip Capacitor
C15 — 130 pF, Chip Capacitor, Murata Erie
C16 — 130 pF, Chip Capacitor, Murata Erie
C17 — 130 pF, Chip Capacitor, Murata Erie
C18 — 130 pF, Chip Capacitor, Murata Erie
C19 — 0.18
μ
F Chip Capacitor
C20 — 10
μ
F, 50 V Electrolytic, Panasonic–ECEV1HV100R
Board — 1/16
″
Glass Teflon,
ε
r = 2.55, Keene (GX–0600–55–22)
L1, L2 — 5 Turns, 20 AWG, ID 0.126
″
L3 — 2 Turns, 26 AWG, ID 0.073
″
N1, N2 — Type N Flange, Omni Spectra (3052–1648–10)
Figure 1. 512 MHz Test Circuit
Murata Erie Chip Capacitors —
GRH710COGxxxx100VBE
SAHA Mini Clamped Mica Capacitors — 3HS0006–xx
相關(guān)PDF資料
PDF描述
MRF857D 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
MRF857S 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
MRF891 RF POWER TRANSISTORS NPN SILICON
MRF891S RF POWER TRANSISTORS NPN SILICON
MRF9011 The Rf Line NPN Silicon High-Frequency Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6P18190HR5 功能描述:射頻MOSFET電源晶體管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P18190HR6 功能描述:射頻MOSFET電源晶體管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P21190HR5 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P21190HR6 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P21190HR6_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*