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參數(shù)資料
| 型號： | MRF891S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MRF891S |
2–11
MRF891 MRF891S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 24 volt UHF large–signal, common–emitter amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
800–960 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Power Gain = 9.0 dB Min
Efficiency = 50% Min
Series Equivalent Large–Signal Characterization
Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output
Power and Supply Voltage
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
30
Vdc
Collector–Emitter Voltage
55
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
0.6
Adc
Total Device Dissipation @ TA = 50
°
C (1)
Derate above 50
°
C
18
0.143
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
7.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
30
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
55
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25
°
C)
ON CHARACTERISTICS
ICES
—
—
1.0
mAdc
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
30
—
150
—
NOTES:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
(continued)
Order this document
by MRF891/D
SEMICONDUCTOR TECHNICAL DATA
5.0 W, 900 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 319–07, STYLE 2
MRF891
CASE 319A–02, STYLE 2
MRF891S
REV 6
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