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參數(shù)資料
| 型號(hào)： | MRF6P21190HR6 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場(chǎng)效應(yīng)晶體管，N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 400K |
| 代理商： | MRF6P21190HR6 |
4
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
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C6
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R1
C5C4
C3
C2
R2
B1
B2
C1
C7
R4 B3 B4
C8
C9
C10
C11
R3
C12
C15
C14
C16
C17
C18
C21
C19
C20
C13
C22
C28
C29
C23
C24
C25
C26
C27
C30
C
MRF6P21190
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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| MRF6P27160HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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| MRF6P3300HR3 | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P23190HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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