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參數(shù)資料
| 型號： | MRF6P23190HR6 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 437K |
| 代理商： | MRF6P23190HR6 |
MRF6P23190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
p
,
I
I
21
15
16
19
2430
2270
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 40 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
14.4
44
25
24
23
22
38
40
η
D
,
E
14.2
14
13.8
13.6
13.4
13.2
13
42
36
18
12.8
13
G
p
,
I
I
19
13
15
18
2430
2270
IRL
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 80 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
14
34
35
34
32
31
28
30
32
η
D
,
E
13.8
13.6
13.4
13.2
13
12.8
12.6
26
16
12.4
12
Figure 5. Two-Tone Power Gain versus
Output Power
10
10
16
1
I
DQ
= 2850 mA
2375 mA
P
out
, OUTPUT POWER (WATTS) PEP
500
G
p
,
15
14
12
950 mA
13
100
V
DD
= 28 Vdc, f1 = 2345 MHz, f2 = 2355
MHz
TwoTone Measurements, 10 MHz Tone Spacing
11
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
1
10
20
30
40
70
50
P
out
, OUTPUT POWER (WATTS) PEP
I
I
V
DD
= 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
TwoTone Measurements, 10 MHz Tone Spacing
100
0.5
1900 mA
1425 mA
I
DQ
= 950 mA
2375 mA
1900 mA
1425 mA
2850 mA
60
V
DD
= 28 Vdc, P
out
= 40 W (Avg.), I
DQ
= 1900 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
V
DD
= 28 Vdc, P
out
= 80 W (Avg.), I
DQ
= 1900 mA
2Carrier WCDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
η
D
G
ps
η
D
0.5
500
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PDF描述 |
|---|---|
| MRF6P24190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300HR3 | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| MRF6P3300HR5 | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P24190HR6 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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