參數資料
型號： MRF6P24190HR6
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： RF功率場效應晶體管N溝道增強型MOSFET的側向
文件頁數： 5/9頁
文件大?。?/td> 370K
代理商： MRF6P24190HR6
MRF6P24190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
G
p
,
500
10
10
50
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
I
DQ
= 1900 mA
f = 2450 MHz
V
DD
= 12 V
100
40
30
20
10.5
14.5
14
13
12
η
D
,
η
D
32 V
30 V
32 V
30 V
28 V
13.5
12.5
11.5
11
45
35
25
15
G
p
,
300
10
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 V
f = 2450 MHz
100
10.5
14.5
14
13
12
13.5
12.5
11.5
11
1500 mA
1600 mA
2100 mA
2200 mA
1900 mA
G
p
,
10
10
50
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 V
I
DQ
= 1900 mA
f = 2450 MHz
100
40
30
20
10.5
14.5
14
13
12
η
D
,
η
D
13.5
12.5
11.5
11
45
35
25
15
250
10
8
90
T
J
, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 190 W CW, and
η
D
= 46.2%.
Figure 6. MTTF versus Junction Temperature
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu
lators by product.
10
7
10
6
10
4
110
130
150
170
190
M
210
230
10
5
相關PDF資料
PDF描述
MRF6P27160HR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P3300HR3 RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
MRF6P3300HR5 RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
MRF6P3300H RF Power Field Effect Transistor
相關代理商/技術參數
參數描述
MRF6P24190HR6_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P27160H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P27160HR5 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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