參數資料
型號： MRF6S19140HSR3
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： N溝道增強型MOSFET的外側
文件頁數： 1/12頁
文件大小： 399K
代理商： MRF6S19140HSR3
MRF6S19140HR3 MRF6S19140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
Typical 2-carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1150 mA,
P
out
= 29 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8
dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
530
3
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
CW Operation
CW
140
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 140 W CW
Case Temperature 77
°
C, 29 W CW
R
θ
JC
0.33
0.38
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S19140H
Rev. 2, 7/2005
Freescale Semiconductor
Technical Data
MRF6S19140HR3
MRF6S19140HSR3
1990 MHz, 29 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S19140HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S19140HR3
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關代理商/技術參數
參數描述
MRF6S19140HSR5 功能描述:射頻MOSFET電源晶體管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S19200H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S19200HR3 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S19200HR5 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S19200HSR3 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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