參數(shù)資料
型號(hào)： MRF6S21100HSR3
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 434K
代理商： MRF6S21100HSR3
MRF6S21100HR3 MRF6S21100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-carrier W-CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
=
23 Watts Avg., Full Frequency Band, Channel Band-
width = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.9 dB
Drain Efficiency — 27.6%
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39.5 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
In Tape and Reel. R3
Suffix = 250
Units per 56
mm,
13
inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
388
2.2
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 100 W CW
Case Temperature 77
°
C, 23 W CW
R
θ
JC
0.45
0.52
°
C/W
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF6S21100H
Rev. 2, 12/2004
Freescale Semiconductor
Technical Data
MRF6S21100HR3
MRF6S21100HSR3
2170 MHz, 23 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF6S21100HR3
CASE 465A-06, STYLE 1
NI-780S
MRF6S21100HSR3
Freescale Semiconductor, Inc., 2004. All rights reserved.
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MRF6S21100NR1 功能描述:射頻MOSFET電源晶體管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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