參數(shù)資料
型號: MRF6S27085HR3
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: N溝道增強型MOSFET的外側(cè)
文件頁數(shù): 11/12頁
文件大?。?/td> 358K
代理商: MRF6S27085HR3
MRF6S27085HR3 MRF6S27085HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465-06
ISSUE F
NI-780
MRF6S27085HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
A
B
C
D
E
F
G
H
K
M
MIN
1.335
0.380
0.125
0.495
0.035
0.003
1.100 BSC
0.057
0.170
0.774
MAX
1.345
0.390
0.170
0.505
0.045
0.006
MIN
33.91
9.65
3.18
12.57
0.89
0.08
27.94 BSC
1.45
4.32
19.66
MAX
34.16
9.91
4.32
12.83
1.14
0.15
MILLIMETERS
INCHES
0.067
0.210
0.786
1.70
5.33
19.96
N
Q
R
S
0.772
.118
0.365
0.365
0.005 REF
0.010 REF
0.015 REF
0.788
.138
0.375
0.375
19.60
3.00
9.27
9.27
0.127 REF
0.254 REF
0.381 REF
20.00
3.51
9.53
9.52
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
aaa
bbb
ccc
Q
2X
M
A
M
bbb
B
M
T
M
A
M
bbb
B
M
T
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
aaa
B
M
T
(INSULATOR)
R
M
A
M
ccc
B
M
T
(LID)
CASE 465A-06
ISSUE F
NI-780S
MRF6S27085HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM
A
B
C
D
E
F
H
K
M
N
MIN
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
MAX
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
MILLIMETERS
INCHES
R
S
U
Z
0.365
0.365
0.375
0.375
0.040
0.030
9.27
9.27
9.53
9.52
1.02
0.76
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb
ccc
0.010 REF
0.015 REF
0.254 REF
0.381 REF
aaa
0.005 REF
0.127 REF
M
A
M
bbb
B
M
T
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
A
A
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
R
(LID)
S
(INSULATOR)
相關(guān)PDF資料
PDF描述
MRF6S9045N RF Power Field Effect Transistors
MRF6S9045 RF Power Field Effect Transistors
MRF6S9045MBR1 RF Power Field Effect Transistors
MRF6S9045MR1 RF Power Field Effect Transistors
MRF6S9045NR1 RF Power Field Effect Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S27085HR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S27085HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27085HR5 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S27085HS 制造商:Freescale Semiconductor 功能描述:
MRF6S27085HSR3 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray