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參數(shù)資料
| 型號： | MRF6S9045NR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應晶體管 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 530K |
| 代理商： | MRF6S9045NR1 |
14
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
PACKAGE DIMENSIONS
TO-270-2
PLASTIC
CASE 1265-08
ISSUE H
DATUM
PLANE
BOTTOM VIEW
A1
2X
E4
E
D1
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
D
A
M
aaa
D
2X
b1
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
“
D1" AND
“
E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
D1" AND
E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE
“
J" ONLY.
8. DIMENSIONS
“
D" AND
“
E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS
D" AND
E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE D.
NOTE 7
c1
F
ZONE J
E2
E5
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
MIN
.078
.039
.040
.416
.378
.290
.016
.436
.238
.066
.150
.058
.231
MAX
.082
.043
.042
.424
.382
.320
.024
.444
.242
.074
.180
.066
.235
MIN
1.98
0.99
1.02
10.57
9.60
7.37
0.41
11.07
6.04
1.68
3.81
1.47
5.87
MAX
2.08
1.09
1.07
10.77
9.70
8.13
0.61
11.28
6.15
1.88
4.57
1.68
5.97
MILLIMETERS
INCHES
F
b1
c1
aaa
.193
.007
.199
.011
4.90
0.18
5.06
0.28
.025 BSC
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
E5
MRF6S9045NR1(MR1)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S9045NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S9060 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9060MBR1 | 功能描述:MOSFET RF N-CH 28V 14W TO-272-2 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9060MR1 | 功能描述:MOSFET RF N-CH 28V 14W TO-270-2 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9060N | 制造商:Freescale Semiconductor 功能描述:MRF6S9060N - Bulk |
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