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參數(shù)資料
| 型號： | MRF6VP21KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 702K |
| 代理商： | MRF6VP21KHR6 |
10
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
Initial Release of Data Sheet
1
Apr. 2008
Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the
footnote to read “L4” versus “L3”, p. 3.
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
Sept. 2008
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
Dec. 2008
Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to
show push--pull test conditions, p. 7
4
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Reporting of pulsed thermal data now shown using the ZθJC symbol,p.1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 10
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6VP2600HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3091NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3091NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6VP3091NR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3450HR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP2600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP2600HR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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