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參數(shù)資料
| 型號(hào)： | MRF6VP21KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 702K |
| 代理商： | MRF6VP21KHR6 |
2
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
20
μAdc
Drain--Source Breakdown Voltage
(ID = 300 mA, VGS =0 Vdc)
V(BR)DSS
110
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
5
mA
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage (2)
(VDD =50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =4 Adc)
VDS(on)
—
0.28
—
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 225 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
22
24
26
dB
Drain Efficiency
ηD
65
67.5
—
%
Input Return Loss
IRL
—
--15
--9
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
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| MRF6VP2600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet |
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