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參數(shù)資料
| 型號(hào)： | MRF6VP21KHR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 702K |
| 代理商： | MRF6VP21KHR6 |
6
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
TYPICAL CHARACTERISTICS
45
40
65
20
25_C
TC =--30_C
85_C
35
25
55
50
Pin, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus
Input Power
P out
,O
UT
PU
T
POWER
(d
Bm)
30
40
60
26
10
90
100
25
23
21
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D
,DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
24
22
18
1000
2000
25_C
TC =--30_C
85_C
20
Gps
45
20
19
80
VDD =50 Vdc
IDQ = 150 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
VDD =50 Vdc
IDQ = 150 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
0.2
110
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
Z JC
,T
HE
RM
AL
IM
PE
DA
NCE
(°
C/W)
0.00001
D= 0.7
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.0001
0.001
0.01
0.1
D= 0.5
D= 0.1
D=Duty Factor =t1/t2
t1 = Pulse Width
t2 = Pulse Period
TJ =PD *ZJC +TC
t2
t1
PD
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 67.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
106
110
130
150
170
190
MTTF
(H
OU
RS
)
210
230
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP2600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP2600HR6 | 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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