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參數(shù)資料
| 型號(hào)： | MRF7S21170HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 797K |
| 代理商： | MRF7S21170HR3 |
2
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 372 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS =28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD =28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =3.72 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS =28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS =28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
703
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2167.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
29
31
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37
--35
dBc
Input Return Loss
IRL
—
--15
--9
dB
1. VGG =2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21170HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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| MRF7S21170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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