- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF7S21170HR3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF7S21170HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 2/17頁 |
| 文件大小： | 797K |
| 代理商： | MRF7S21170HR3 |
10
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
P3dB = 53.56 dBm (226 W)
Pin, INPUT POWER (dBm)
VDD =28 Vdc,IDQ = 1400 m, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
56
54
52
37
39
38
41
40
44
42
Actual
Ideal
P1dB = 52.75 dBm
(188 W)
57
55
51
43
P out
,O
UT
PU
T
POWER
(d
Bm)
P6dB = 53.89 dBm (244 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
35
34
33
32
Test Impedances per Compression Level
Zsource
Zload
P3dB
4.43 -- j11.85
0.81 -- j2.87
Figure 16. Pulsed CW Output Power
versus Input Power @ 28 V
36
P3dB = 54.65 dBm (290 W)
Pin, INPUT POWER (dBm)
VDD =32 Vdc,IDQ = 1400 mA, Pulsed CW
12 μsec(on), 10% Duty Cycle, f = 2140 MHz
56
54
52
37
39
38
41
40
44
42
Actual
Ideal
P1dB = 53.54 dBm
(226 W)
57
55
43
P out
,O
UT
PU
T
POWER
(d
Bm)
P6dB = 54.88 dBm (307 W)
NOTE: Measured in a Peak Tuned Load Pull Fixture
53
58
59
60
61
62
35
34
33
45
Test Impedances per Compression Level
Zsource
Zload
P3dB
4.43 -- j11.85
0.72 -- j2.87
Figure 17. Pulsed CW Output Power
versus Input Power @ 32 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF7S21210HR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S21210HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S27130HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S35015HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7S38010HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21170HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF7S21170HR3_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。