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參數(shù)資料
| 型號： | MRF7S21170HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 797K |
| 代理商： | MRF7S21170HR3 |
MRF7S21170HR3 MRF7S21170HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
--60
--10
1
100
--40
--50
10
--30
--20
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
40
Actual
Ideal
0
--2
--4
OU
TPU
T
CO
MPR
ESSION
AT
TH
E
0.0
1%
PROBABILITY
ON
THE
CCDF
(dB)
10
VDD =28 Vdc,Pout = 170 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
--10
--20
--40
1
100
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
20
60
400
VDD =28 Vdc,IDQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--50
--30
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
80
120
18
54
48
42
36
30
24
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
VDD =28 Vdc,IDQ = 1400 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
--1 dB = 43.335 W
0
--2 dB = 61.884 W
--3 dB = 83.111 W
100
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
--70
--20
40
42
41
--30
--40
--50
--60
AC
PR
,U
PPER
AN
D
LOWER
RESU
LT
S
(d
Bc)
43
44
45
46
47
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with Memory Correction
400
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD =28 Vdc
IDQ = 1400 mA
f = 2140 MHz
TC =--30_C
25_C
85_C
10
1
18
17
16
15
14
50
40
30
20
10
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
Gps
ηD
G
ps
,P
OWER
GAIN
(d
B)
100
--30_C
25_C
85_C
48
49
--60
VDD =28 Vdc,IDQ = 1400 mA, f = 2140 MHz Single--Carrier
W--CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5MHz
Offset in 3.84 MHz Integrated Bandwidth
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21170HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF7S21170HR3_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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